Part Image

FDP20N50F - onsemi

Description: Low gate charge ( Typ. 50nC); Improved dv/dt capability; RoHS compliant; Low Crss ( Typ. 27pF); RDS(on) = 210mΩ ( Typ.)@ VGS = 10V, ID = 10A; 100% avalanche tested

Download FDP20N50F Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDP20N50F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
click to zoom
3D Models
FDP20N50F - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
click to zoom

FDP20N50F Details

  • Manufacturer Part Number:

    FDP20N50F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    1110 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP20N50F Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the FDP20N50F is 175°C. Exceeding this temperature can lead to device failure.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good thermal contact between the device and the heat sink. Additionally, ensure good airflow around the device.
  • The recommended gate resistor value for the FDP20N50F is between 10Ω and 100Ω. A higher value can lead to slower switching times, while a lower value can lead to oscillations.
  • Yes, the FDP20N50F is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. Additionally, use a current sense resistor and a fuse or a current limiter to protect the device from overcurrent.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDP20N50F Overview

Use the download button to access the FDP20N50F schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDP20, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDP20N50F

Showing 0 results