FDP22N50N - onsemi
Description: Improved dv/dt capability; RDS(on) = 185mΩ ( Typ.)@ VGS = 10V, ID = 11A; Low Crss ( Typ. 24pF); 100% avalanche tested; RoHS compliant; Low gate charge ( Typ. 49nC)
Description: Improved dv/dt capability; RDS(on) = 185mΩ ( Typ.)@ VGS = 10V, ID = 11A; Low Crss ( Typ. 24pF); 100% avalanche tested; RoHS compliant; Low gate charge ( Typ. 49nC)
