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FDP22N50N - onsemi

Description: Improved dv/dt capability; RDS(on) = 185mΩ ( Typ.)@ VGS = 10V, ID = 11A; Low Crss ( Typ. 24pF); 100% avalanche tested; RoHS compliant; Low gate charge ( Typ. 49nC)

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PCB Footprints
FDP22N50N - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220, Molded, 3-Lead, Jedec Variation AB_2023
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3D Models
FDP22N50N - onsemi  - 3D model - Transistor Outline, Vertical - TO220, Molded, 3-Lead, Jedec Variation AB_2023
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FDP22N50N Details

  • Manufacturer Part Number:

    FDP22N50N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    61 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.22 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    312.5 W

  • Pulsed Drain Current-Max (IDM):

    88 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP22N50N Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FDP22N50N is 175°C. Exceeding this temperature can lead to device failure.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the FDP22N50N is between 10V and 15V. This ensures proper switching and minimizes power losses.
  • Yes, the FDP22N50N is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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FDP22N50N Overview

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Part Image FDP22N50N Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 22A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB