FDP2D9N12C - onsemi

Description: Shielded Gate MOSFET Technology; Max RDS(on) = 2.95 mΩ at VGS = 10 V, ID = 181 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; 100% UIL Tested; These Devices are Pb−Free, Halogen−Free and are RoHS Compliant