FDPC8013S - onsemi

Description: RoHS Compliant ; Q1 N-Channel Max. RDS(on) = 9.6 mΩ at VGS = 4.5 V, ID = 10 A; Q2 N-Channel Max. RDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 22 A; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing