FDS2670 - onsemi
Description: 3.0A, 200 V; High power and current handling capability; RDS(ON) = 130 mΩ @ VGS = 10 V; Fast switching speed; Low gate charge; High performance trench technology for extremely low RDS(ON)
Description: 3.0A, 200 V; High power and current handling capability; RDS(ON) = 130 mΩ @ VGS = 10 V; Fast switching speed; Low gate charge; High performance trench technology for extremely low RDS(ON)
