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FDS2670 - onsemi

Description: 3.0A, 200 V; High power and current handling capability; RDS(ON) = 130 mΩ @ VGS = 10 V; Fast switching speed; Low gate charge; High performance trench technology for extremely low RDS(ON)

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FDS2670 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC 8
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FDS2670 - onsemi  - 3D model - Small Outline Packages - SOIC 8
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FDS2670 Details

  • Manufacturer Part Number:

    FDS2670

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS2670 Frequently Asked Questions (FAQs)

  • The FDS2670 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDS2670 requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
  • Use a multi-layer PCB with a solid ground plane, and keep the FDS2670 away from high-frequency signals. Use short, direct traces for the bias voltage and keep the input and output traces separate to minimize crosstalk.
  • Use a voltage regulator to limit the voltage to the recommended range. Add ESD protection diodes and a TVS (Transient Voltage Suppressor) to protect the FDS2670 from voltage spikes and ESD events.
  • Store the FDS2670 in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, to prevent damage. Use anti-static packaging and follow proper ESD handling procedures.

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FDS2670 Overview

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