FDS3512 - onsemi

Description: High performance trench technology for extremely low RDS(ON); Fast switching speed; 4.0 A, 80 V; RDS(ON) = 70 mΩ @ VGS = 10 V; Low gate charge (13nC typical); High power and current handling capability; RDS(ON) = 80 mΩ @ VGS = 6 V