Part Image

FDS3512 - onsemi

Description: High performance trench technology for extremely low RDS(ON); Fast switching speed; 4.0 A, 80 V; RDS(ON) = 70 mΩ @ VGS = 10 V; Low gate charge (13nC typical); High power and current handling capability; RDS(ON) = 80 mΩ @ VGS = 6 V

Download FDS3512 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDS3512 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
click to zoom
3D Models
FDS3512 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
click to zoom

FDS3512 Details

  • Manufacturer Part Number:

    FDS3512

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS3512 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDS3512 involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.
  • To ensure the FDS3512 operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive temperatures, and the input voltage and output current are within the recommended operating ranges.
  • The recommended input capacitor value for the FDS3512 is 1-10uF, with a voltage rating of 50V or higher. A low-ESR ceramic capacitor, such as an X5R or X7R type, is recommended for optimal performance.
  • To troubleshoot issues with the FDS3512, start by checking the input voltage, output current, and junction temperature. Verify that the device is properly soldered and the PCB layout is correct. Check for any signs of physical damage or contamination. If the issue persists, consult the onsemi application note or contact their technical support.
  • Yes, the FDS3512 is suitable for high-reliability and automotive applications. It meets the requirements of the AEC-Q100 standard for automotive grade devices, and its robust design and manufacturing process ensure high reliability in demanding environments.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDS3512 Overview

Use the download button to access the FDS3512 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDS35, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDS3512

Showing 0 results

FDS3512 Alternates

Showing results

Image Part Number Model
Part Image FDS3512 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS3512L86Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS3512F011 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS3512D84Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET