FDS3672 - onsemi
Description: Optimized efficiency at high frequencies; RDS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A; Qg(TOT) = 28nC (Typ.), VGS = 10V; Low QRR Body Diode; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge
Description: Optimized efficiency at high frequencies; RDS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A; Qg(TOT) = 28nC (Typ.), VGS = 10V; Low QRR Body Diode; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge
