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FDS3672 - onsemi

Description: Optimized efficiency at high frequencies; RDS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A; Qg(TOT) = 28nC (Typ.), VGS = 10V; Low QRR Body Diode; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge

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FDS3672 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS3672 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS3672 Details

  • Manufacturer Part Number:

    FDS3672

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    416 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS3672 Frequently Asked Questions (FAQs)

  • The FDS3672 can operate from -40°C to 150°C, making it suitable for automotive and industrial applications.
  • To ensure proper biasing, connect the gate of the FDS3672 to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended biasing scheme is shown in the application note.
  • The FDS3672 has a maximum current rating of 2.5A, making it suitable for low-power applications such as automotive and industrial control systems.
  • To protect the FDS3672 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container.
  • Yes, the FDS3672 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).

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FDS3672 Overview

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Part Image FDS3672_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA