FDS4935A - onsemi

Description: RDS(ON) = 35 mΩ @ VGS = -4.5V ; -7A, -30V ; High performance trench technology for extremely low RDS(ON) ; Low gate charge (15nC typical) ; High power and current handling capability ; RDS(ON) = 23 mΩ @ VGS = -10V ; Fast switching speed