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FDS4935A - onsemi

Description: RDS(ON) = 35 mΩ @ VGS = -4.5V ; -7A, -30V ; High performance trench technology for extremely low RDS(ON) ; Low gate charge (15nC typical) ; High power and current handling capability ; RDS(ON) = 23 mΩ @ VGS = -10V ; Fast switching speed

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FDS4935A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC 8
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FDS4935A - onsemi  - 3D model - Small Outline Packages - SOIC 8
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FDS4935A Details

  • Manufacturer Part Number:

    FDS4935A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4935A Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDS4935A involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.
  • To ensure the FDS4935A operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive voltage, current, or temperature, and that the thermal design is adequate to keep the junction temperature below the maximum rating.
  • A low-ESR ceramic capacitor with a value of 1-10uF is recommended for the input of the FDS4935A. The capacitor should be placed close to the device and have a low inductance to minimize voltage ripple and noise.
  • To troubleshoot issues with the FDS4935A, start by checking the input voltage, output voltage, and output current. Verify that the device is properly connected and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Use an oscilloscope to check for voltage ripple or oscillations, and consult the datasheet and application notes for guidance.
  • Yes, the FDS4935A is suitable for high-reliability and automotive applications. It is AEC-Q100 qualified and meets the requirements for automotive and industrial applications. However, ensure that the device is used within its specified operating conditions and that the system design meets the required safety and reliability standards.

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FDS4935A Overview

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