IRLML6402 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRLML6402 International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402 SLKOR	1			IRLML6402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402 Shenzhen Heketai Electronics Co Ltd	1	P-Channel MOSFET in SOT-23 package with -20V drain-source voltage, -3.7A continuous drain current at 25°C, ultra-low on-resistance of 65 mΩ at VGS = -4.5V, and fast switching capabilities.		IRLML6402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402 Infineon	1	P-Channel MOSFET Transistor, 3.7 A, 20 V, 3-Pin SOT-23 International Rectifier IRLML6402	SOT23 (3-Pin)	IRLML6402	3D model available Symbol and footprint available 3	1 Download Model

	IRLML6402PBF Infineon	1	INFINEON - IRLML6402PBF - MOSFET,P CH,-20V,-3.7A,SOT-23	SOT23 (3-Pin)	IRLML6402PBF	3D model available Symbol and footprint available 3	1 Download Model
	IRLML6402TRPBF Infineon	1	MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl	SOT23 (3-Pin)	IRLML6402TRPBF	3D model available Symbol and footprint available 3	1 Download Model
	IRLML6402TRPBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.3A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET		IRLML6402TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402GTRPBF International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6402GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402GPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6402GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TR International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6402TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402PBF International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6402PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402GPBF International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6402GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402GTRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6402GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TRPBF International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6402TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TRPBF-1 International Rectifier	1	Power Field-Effect Transistor		IRLML6402TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML6402TRPBF VBsemi Electronics Co Ltd	1	P-Channel 20 V, 5 A MOSFET in SOT-23 package with 35 mΩ RDS(on) at VGS = -10 V, suitable for load switches, PA switches, and DC/DC converters.		IRLML6402TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

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