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IRLML6402TRPBF - Infineon

Description: MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl

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PCB Footprints
IRLML6402TRPBF - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - Micro3 (SOT23)
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3D Models
IRLML6402TRPBF - Infineon  - 3D model - SOT23 (3-Pin) - Micro3 (SOT23)
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IRLML6402TRPBF Details

  • Manufacturer Part Number:

    IRLML6402TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.3 W

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLML6402TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLML6402TRPBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • Use a compact PCB layout with short, wide traces, and place the device close to the power source. Avoid using vias under the device, and use a solid ground plane to reduce inductance.
  • Yes, the IRLML6402TRPBF is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout, and consider using a gate driver to minimize switching losses.
  • Handle the device with ESD-protective equipment, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD-protection ICs.

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IRLML6402TRPBF Overview

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IRLML6402TRPBF Alternates

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Image Part Number Model
Part Image IRLML6402TRPBF International Rectifier

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML6402TR International Rectifier

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML6402GPBF Infineon Technologies AG

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML6402GTRPBF Infineon Technologies AG

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image IRLML6402PBF International Rectifier

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

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