FDS6575 - onsemi
Description: High performance trench technology for extremely low RDS(ON); RDS(ON) = 13 mΩ @ VGS = -4.5 V ; RDS(ON) = 17 mΩ @ VGS = -2.5 V ; Low gate charge; High power and current handling capability; -10 A, -20 V
Description: High performance trench technology for extremely low RDS(ON); RDS(ON) = 13 mΩ @ VGS = -4.5 V ; RDS(ON) = 17 mΩ @ VGS = -2.5 V ; Low gate charge; High power and current handling capability; -10 A, -20 V
