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FDS6575 - onsemi

Description: High performance trench technology for extremely low RDS(ON); RDS(ON) = 13 mΩ @ VGS = -4.5 V ; RDS(ON) = 17 mΩ @ VGS = -2.5 V ; Low gate charge; High power and current handling capability; -10 A, -20 V

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FDS6575 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB
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FDS6575 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB
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FDS6575 Details

  • Manufacturer Part Number:

    FDS6575

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.013 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6575 Frequently Asked Questions (FAQs)

  • The FDS6575 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the VEE pin to a stable -5V power supply. Also, ensure the input voltage (VIN) is within the recommended range of 2.5V to 5.5V.
  • To minimize noise and ensure optimal performance, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and separate, and use a 10nF decoupling capacitor between VCC and GND.
  • To prevent electrostatic discharge (ESD) damage, use ESD protection devices such as TVS diodes or ESD arrays on the input lines, and ensure the PCB design includes a solid ground plane and proper grounding.
  • The recommended input impedance for the FDS6575 is 50 ohms, which ensures optimal signal integrity and minimizes signal reflections.

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FDS6575 Overview

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Part Image FDS6575F011 Fairchild Semiconductor Corporation

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For a full list of alternate parts for FDS6575, check out Findchips.com