FDS6670A - onsemi
Description: Low gate charge; Fast switching speed; 13 A, 30 V; RDS(ON) = 10 mΩ @ VGS = 4.5 V; High power and current handling capability; High performance trench technology for extremely low RDS(ON); RDS(ON) = 8 mΩ @ VGS = 10 V
Description: Low gate charge; Fast switching speed; 13 A, 30 V; RDS(ON) = 10 mΩ @ VGS = 4.5 V; High power and current handling capability; High performance trench technology for extremely low RDS(ON); RDS(ON) = 8 mΩ @ VGS = 10 V
