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FDS6670A - onsemi

Description: Low gate charge; Fast switching speed; 13 A, 30 V; RDS(ON) = 10 mΩ @ VGS = 4.5 V; High power and current handling capability; High performance trench technology for extremely low RDS(ON); RDS(ON) = 8 mΩ @ VGS = 10 V

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FDS6670A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - so8-1
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FDS6670A Details

  • Manufacturer Part Number:

    FDS6670A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    200 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    88 ns

  • Turn-on Time-Max (ton):

    43 ns

FDS6670A Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FDS6670A is 4.5V to 18V.
  • To ensure proper biasing, connect the gate of the FDS6670A to a voltage source through a resistor, and connect the source to ground through another resistor. The recommended biasing voltage is around 2.5V to 3.5V.
  • The maximum current rating for the FDS6670A is 10A. However, it's recommended to operate the device at a maximum current of 5A to ensure reliable operation and minimize thermal stress.
  • To protect the FDS6670A from overvoltage and overcurrent conditions, use a voltage regulator to regulate the input voltage, and add a current-sensing resistor and a fuse in series with the device to detect and respond to overcurrent conditions.
  • The thermal resistance of the FDS6670A is 2.5°C/W. To ensure proper thermal management, use a heat sink with a thermal resistance of 1°C/W or lower, and ensure good airflow around the device.

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FDS6670A Overview

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Part Image FDS6670A_NL Fairchild Semiconductor Corporation

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