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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDS6670A onsemi
1 Low gate charge; Fast switching speed; 13 A, 30 V; RDS(ON) = 10 mΩ @ VGS = 4.5 V; High power and current handling capability; High performance trench technology for extremely low RDS(ON); RDS(ON) = 8 mΩ @ VGS = 10 V Small Outline Packages FDS6670A 1 Download Model
Part Image Part Image 1 Extended VGS range (-25V) for battery applications ; High performance trench technology for extremely low rDS(on) ; RoHS compliant ; Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A ; Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A ; High power and current handling capability ; HBM ESD protection level of 6.5kV typical (note 3) Small Outline Packages FDS6673BZ 1 Download Model
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FDS6692A onsemi
1 Last Shipments - N-Channel PowerTrench SyncFET, 30V, 21A, 3.6mΩ Small Outline Packages FDS6692A 1 Download Model
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FDS6612A onsemi
1 Low gate charge ; Fast switching speed ; RDS(ON) = 22 mΩ @ VGS = 10 V ; High power and current handling capability ; High performance trench technology for extremely low RDS(ON) ; 8.4 A, 30 V ; RDS(ON) = 30 mΩ @ VGS = 4.5 V Small Outline Packages FDS6612A 1 Download Model
Part Image Part Image 1 Obsolete - N-Channel PowerTrench MOSFET 30V, 9A, 11.5mΩ Small Outline Packages FDS6690AS 1 Download Model
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FDS6675 onsemi
1 Obsolete - 30V N-Channel PowerTrench SyncFET 14.5A, 6.0mΩ Small Outline Packages FDS6675 1 Download Model
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FDS6680A onsemi
1 Ultra-low gate charge ; High performance trench technology for extremely low RDS(ON) ; RDS(ON) = 13 mΩ @ VGS = 4.5 V ; RDS(ON) = 9.5 mΩ @ VGS = 10 V ; 12.5 A, 30 V ; High power and current handling capability Small Outline Packages FDS6680A 1 Download Model
Part Image Part Image 1 Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A ; Extended VGS range (-25V) for battery applications ; RoHS Compliant ; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A ; HBM ESD protection level of 5.4 KV typical (note 3) ; High power and current handing capability Small Outline Packages FDS6675BZ 1 Download Model
Part Image Part Image 1 13.5A, 30V RDS(on) = 9.0mΩ @ VGS = 10V RDS(on) = 11.5mΩ @ VGS = 4.5V ; High power and current handling capability ; Low gate charge (27nC typical) ; RoHS Compliant ; Includes SyncFET Schottky body diode ; High performance trench technology for extremely lowRDS(ON) and fast switching Small Outline Packages FDS6670AS 1 Download Model
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FDS6682 onsemi
1 High power and current handling capability; High performance trench technology for extremelylow RDS(ON); RDS(ON) = 7.5 mΩ @ VGS = 10 V; 14 A, 30 V; Low gate charge (22 nC typical); RDS(ON) = 9.0 mΩ @ VGS = 4.5 V Small Outline Packages FDS6682 1 Download Model
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FDS6673BZ Rochester Electronics
1 P-Channel 30 V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC Small Outline Packages FDS6673BZ 1 Download Model
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FDS6679 onsemi
1 Obsolete - Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 12.5A, 9.5mΩ Small Outline Packages FDS6679 1 Download Model
Part Image Part Image 1 Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A; HBM ESD protection level of 6kV typical (note 3); High power and current handing capability; Extended VGS range (-25V) for battery applications; High performance trench technology for extremely lowrDS(on); High power and current handing capability; Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A Small Outline Packages FDS6679AZ 1 Download Model
Part Image Part Image 1 Last Shipments - N-Channel PowerTrench MOSFET, 30V, 14A, 7.5mΩ Small Outline Packages FDS6680AS 1 Download Model
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FDS6690A onsemi
1 Low gate charge; High power and current handling capability; RDS(ON) = 12.5 mΩ @ VGS = 10 V; 11 A, 30 V; High performance trench technology for extremely low RDS(ON); Fast switching speed; RDS(ON) = 17.0 mΩ @ VGS = 4.5 V Small Outline Packages FDS6690A 1 Download Model
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FDS6630A onsemi
1 Last Shipments - N-Channel PowerTrench SyncFET, 30V, 13.5A, 9.0mΩ Small Outline Packages FDS6630A 1 Download Model
Part Image Part Image 1 Obsolete - P-Channel PowerTrench MOSFET, 30V, -13A, 9mΩ Small Outline Packages FDS6676AS 1 Download Model
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FDS6681Z onsemi
1 RDS(ON) = 6.5 mΩ @ VGS = -4.5V; RDS(ON) = 4.6 mΩ @ VGS = -10V; -20 A, -30V; Extended VGSS range (–25V) for battery applications; HBM ESD protection level of 8kV typical (note 3); High performance trench technology for extremely low RDS(ON); High power and current handling capability; Termination is Lead-free and RoHS Compliant Small Outline Packages FDS6681Z 1 Download Model
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FDS6679ZD84Z Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDS6679ZD84Z 0 Build or Request
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FDS6690_NL Rochester Electronics LLC
1 10000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 FDS6690_NL 0 Build or Request
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FDS6690AL99Z Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 11A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDS6690AL99Z 0 Build or Request
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FDS6682 Rochester Electronics LLC
1 14000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 FDS6682 0 Build or Request
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FDS6688A Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDS6688A 0 Build or Request
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FDS6678AD84Z Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.0075A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDS6678AD84Z 0 Build or Request
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FDS6672AL99Z Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 12.5A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDS6672AL99Z 0 Build or Request
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