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FDS6675BZ - onsemi

Description: Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A ; Extended VGS range (-25V) for battery applications ; RoHS Compliant ; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A ; HBM ESD protection level of 5.4 KV typical (note 3) ; High power and current handing capability

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FDS6675BZ Details

  • Manufacturer Part Number:

    FDS6675BZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.013 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    500 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    55 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    300 ns

  • Turn-on Time-Max (ton):

    26 ns

FDS6675BZ Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FDS6675BZ is 4.5V to 18V.
  • To ensure proper biasing, connect the gate of the FDS6675BZ to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended biasing voltage is typically around 5V to 10V.
  • The maximum current rating for the FDS6675BZ is 3.5A. Exceeding this rating may cause damage to the device.
  • To protect the FDS6675BZ from overvoltage and overcurrent conditions, use a voltage regulator or a voltage clamp to limit the voltage, and add a current-limiting resistor or a fuse to prevent excessive current.
  • The thermal resistance of the FDS6675BZ is typically around 40°C/W. This means that for every watt of power dissipated, the junction temperature will increase by 40°C.

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FDS6675BZ Overview

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