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FDS6681Z - onsemi

Description: RDS(ON) = 6.5 mΩ @ VGS = -4.5V; RDS(ON) = 4.6 mΩ @ VGS = -10V; -20 A, -30V; Extended VGSS range (–25V) for battery applications; HBM ESD protection level of 8kV typical (note 3); High performance trench technology for extremely low RDS(ON); High power and current handling capability; Termination is Lead-free and RoHS Compliant

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FDS6681Z - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_2021
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FDS6681Z - onsemi  - 3D model - Small Outline Packages - SO-8_2021
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FDS6681Z Details

  • Manufacturer Part Number:

    FDS6681Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.2

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6681Z Frequently Asked Questions (FAQs)

  • The FDS6681Z can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and ensure the drain-source voltage is within the recommended range (typically 10-20 V).
  • Use a thermal pad on the bottom of the package, and ensure good thermal conductivity between the pad and the PCB. A thermal via or thermal plane can also be used to improve heat dissipation.
  • Yes, the FDS6681Z can be used in switching applications, but be aware of the maximum switching frequency (typically 100 kHz) and ensure the device is properly biased to avoid overheating.
  • Use ESD protection devices, such as TVS diodes or ESD protection arrays, on the input and output pins to prevent damage from static electricity.

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FDS6681Z Overview

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