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FDS6682 - onsemi

Description: High power and current handling capability; High performance trench technology for extremelylow RDS(ON); RDS(ON) = 7.5 mΩ @ VGS = 10 V; 14 A, 30 V; Low gate charge (22 nC typical); RDS(ON) = 9.0 mΩ @ VGS = 4.5 V

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FDS6682 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - --SOIC8 CASE 751EB ISSUE A
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3D Models
FDS6682 - onsemi  - 3D model - Small Outline Packages - --SOIC8 CASE 751EB ISSUE A
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FDS6682 Details

  • Manufacturer Part Number:

    FDS6682

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    237 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    99 ns

  • Turn-on Time-Max (ton):

    34 ns

FDS6682 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDS6682 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDS6682 for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, use a low-ESR output capacitor and minimize the output voltage ripple to reduce power losses. Furthermore, consider using a low-quiescent-current LDO regulator for the VCC supply.
  • The maximum allowed voltage on the VIN pin of the FDS6682 is 28V, with a recommended operating range of 7V to 18V. Exceeding this voltage may damage the device.
  • To ensure stability and reliability, follow the recommended component values and PCB layout guidelines in the datasheet. Additionally, verify that the input voltage is within the recommended range, and that the output voltage is properly regulated. It's also essential to ensure that the device is properly thermally managed and that the junction temperature is within the recommended range.
  • The FDS6682 is rated for operation up to 150°C junction temperature. However, the device's performance and reliability may degrade at high temperatures. It's essential to ensure proper thermal management and to follow the recommended operating conditions to ensure reliable operation.

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FDS6682 Overview

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Part Image FDS6682D84Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET