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FDS6679AZ - onsemi

Description: Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A; HBM ESD protection level of 6kV typical (note 3); High power and current handing capability; Extended VGS range (-25V) for battery applications; High performance trench technology for extremely lowrDS(on); High power and current handing capability; Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A

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FDS6679AZ - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A-2
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FDS6679AZ - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A-2
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FDS6679AZ Details

  • Manufacturer Part Number:

    FDS6679AZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.2

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.0093 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    745 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6679AZ Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDS6679AZ involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDS6679AZ for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, use a low-ESR output capacitor and optimize the inductor value to minimize switching losses. Furthermore, consider using a low-voltage, low-power mode for the controller IC.
  • The FDS6679AZ has a maximum junction temperature of 150°C. To prevent overheating, ensure good airflow around the device, use a heat sink if necessary, and avoid operating the device at maximum power for extended periods. Also, monitor the device's temperature using the thermal monitoring pin (TMP) and take corrective action if the temperature exceeds 120°C.
  • To troubleshoot issues with the FDS6679AZ, start by verifying the PCB layout and component values. Check for proper decoupling, correct inductor value, and adequate output capacitance. Use an oscilloscope to monitor the switching node (SW) and output voltage. Also, ensure that the input voltage is within the recommended range and that the device is properly biased.
  • Yes, the FDS6679AZ is suitable for high-reliability and automotive applications. It meets the AEC-Q100 standard for automotive-grade devices and has a high MTBF (mean time between failures) rating. However, ensure that you follow the recommended PCB layout, component selection, and testing procedures to ensure the device meets the required reliability standards.

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FDS6679AZ Overview

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