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FDS6680AS - onsemi

Description: Last Shipments - N-Channel PowerTrench MOSFET, 30V, 14A, 7.5mΩ

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FDS6680AS - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_2020
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FDS6680AS - onsemi  - 3D model - Small Outline Packages - SO-8_2020
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FDS6680AS Details

  • Manufacturer Part Number:

    FDS6680AS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11.5 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    52 ns

  • Turn-on Time-Max (ton):

    42 ns

FDS6680AS Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDS6680AS involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the compensation network, start by selecting the desired crossover frequency and phase margin. Then, use the datasheet's compensation network design equations to calculate the required component values. Finally, use simulation tools or empirical methods to fine-tune the compensation network for optimal stability and transient response.
  • The maximum allowed voltage on the EN pin of the FDS6680AS is 6V. Exceeding this voltage may damage the device. It's recommended to use a voltage divider or a level shifter to ensure the EN pin voltage remains within the specified range.
  • Yes, the FDS6680AS can be used in a synchronous rectification topology. However, it's essential to ensure that the device is properly configured and that the synchronous rectifier is properly sized to handle the required current and voltage.
  • To handle thermal management, ensure good airflow around the device, use a heat sink if necessary, and follow the recommended PCB layout guidelines. Monitor the device's junction temperature (TJ) and adjust the design as needed to prevent overheating.

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