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FDS6680A - onsemi

Description: Ultra-low gate charge ; High performance trench technology for extremely low RDS(ON) ; RDS(ON) = 13 mΩ @ VGS = 4.5 V ; RDS(ON) = 9.5 mΩ @ VGS = 10 V ; 12.5 A, 30 V ; High power and current handling capability

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FDS6680A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC 8
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FDS6680A - onsemi  - 3D model - Small Outline Packages - SOIC 8
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FDS6680A Details

  • Manufacturer Part Number:

    FDS6680A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12.5 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    160 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    29 ns

FDS6680A Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDS6680A involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDS6680A for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, use a low-ESR output capacitor and optimize the inductor value to minimize switching losses. Furthermore, consider using a low-voltage, low-power mode for the controller IC.
  • The FDS6680A has a thermal pad that must be connected to a thermal plane on the PCB to dissipate heat. Ensure good thermal conductivity by using a thermal interface material and a heat sink if necessary. Also, keep the device away from other heat sources and ensure good airflow around the device.
  • To troubleshoot issues with the FDS6680A, start by checking the PCB layout and ensuring that the device is properly decoupled. Verify that the input voltage is within the recommended range and that the output voltage is stable. Use an oscilloscope to check for oscillations or ringing on the switching node (SW) and output voltage. Consult the datasheet and application notes for guidance on troubleshooting specific issues.
  • Yes, the FDS6680A is suitable for high-reliability and automotive applications. It is AEC-Q100 qualified and has a wide operating temperature range (-40°C to 150°C). However, ensure that the device is properly derated for the specific application and that the PCB design meets the required reliability standards.

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FDS6680A Overview

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