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FDS6679 - onsemi

Description: Obsolete - Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 12.5A, 9.5mΩ

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Symbol
FDS6679 - onsemi - PCB symbol
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PCB Footprints
FDS6679 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8+-
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3D Models
FDS6679 - onsemi - 3D model - Small Outline Packages - SOIC8+-
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FDS6679 Details

  • Manufacturer Part Number:

    FDS6679

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6679 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Bias the FDS6679 with a stable voltage source (e.g., 5V or 3.3V) and ensure the input voltage is within the recommended range (2.7V to 5.5V). Use a 10uF capacitor for input decoupling and a 100nF capacitor for output decoupling.
  • The maximum allowable power dissipation for the FDS6679 is 1.4W. Ensure proper thermal management to prevent overheating, which can lead to reduced performance or device failure.
  • Use ESD protection devices (e.g., TVS diodes or ESD arrays) on the input and output pins. Ensure proper handling and storage procedures to prevent ESD damage.
  • The FDS6679 is designed to operate up to 100 MHz. However, the optimal operating frequency range is typically between 10 kHz to 50 MHz, depending on the specific application.

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FDS6679 Overview

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FDS6679 Alternates

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Part Image FDS6679 Rochester Electronics LLC

13000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8
Part Image FDS6679 Fairchild Semiconductor Corporation

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Part Image FDS6679_NL Fairchild Semiconductor Corporation

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Part Image FDS6679L86Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image FDS6679F011 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
For a full list of alternate parts for FDS6679, check out Findchips.com