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FDS6670AS - onsemi

Description: 13.5A, 30V RDS(on) = 9.0mΩ @ VGS = 10V RDS(on) = 11.5mΩ @ VGS = 4.5V ; High power and current handling capability ; Low gate charge (27nC typical) ; RoHS Compliant ; Includes SyncFET Schottky body diode ; High performance trench technology for extremely lowRDS(ON) and fast switching

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FDS6670AS Details

  • Manufacturer Part Number:

    FDS6670AS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13.5 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6670AS Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDS6670AS involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDS6670AS for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, minimize the voltage on the VIN pin and use a low-quiescent-current voltage regulator for the VCC pin. Furthermore, consider using a low-power mode or shutdown mode if available.
  • The FDS6670AS has a thermal pad that must be connected to a thermal plane on the PCB to dissipate heat. Ensure good thermal conductivity by using a thermal interface material and a heat sink if necessary. Also, keep the device away from other heat sources and ensure good airflow around the device.
  • To troubleshoot issues with the FDS6670AS, start by verifying the input voltage and current, and checking for proper pin connections. Use an oscilloscope to monitor the switching node (SW) and output voltage. Check for overheating, and ensure that the device is properly cooled. Consult the datasheet and application notes for specific troubleshooting guidelines.
  • Yes, the FDS6670AS is suitable for high-reliability and automotive applications. It meets the requirements for AEC-Q100 Grade 1, which ensures its reliability in harsh environments. However, ensure that the device is properly qualified and validated for the specific application, and follow the recommended design and manufacturing guidelines.

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FDS6670AS Overview

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