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FDS6673BZ - onsemi

Description: Extended VGS range (-25V) for battery applications ; High performance trench technology for extremely low rDS(on) ; RoHS compliant ; Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A ; Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A ; High power and current handling capability ; HBM ESD protection level of 6.5kV typical (note 3)

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FDS6673BZ - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO-8-1
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FDS6673BZ - onsemi  - 3D model - Small Outline Packages - SO-8-1
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FDS6673BZ Details

  • Manufacturer Part Number:

    FDS6673BZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    14.5 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    900 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    473 ns

  • Turn-on Time-Max (ton):

    55 ns

FDS6673BZ Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FDS6673BZ is 4.5V to 18V.
  • To ensure proper biasing, connect the gate of the FDS6673BZ to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended biasing voltage is typically around 5V to 10V.
  • The maximum current rating for the FDS6673BZ is 3A. However, it's recommended to operate the device within the recommended operating conditions to ensure reliability and prevent overheating.
  • To protect the FDS6673BZ from overvoltage and overcurrent, use a voltage regulator or a voltage limiter to regulate the input voltage, and consider adding overcurrent protection devices such as fuses or current-limiting resistors.
  • The thermal resistance of the FDS6673BZ is typically around 40°C/W. This means that for every watt of power dissipated, the junction temperature will increase by 40°C.

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FDS6673BZ Overview

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Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6673BZ-F085 onsemi

P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ, SO 8L NB, 2500-REEL, Automotive Qualified