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FDS6676AS - onsemi

Description: Obsolete - P-Channel PowerTrench MOSFET, 30V, -13A, 9mΩ

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FDS6676AS Details

  • Manufacturer Part Number:

    FDS6676AS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    14.5 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6676AS Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDS6676AS is -40°C to 150°C.
  • To ensure proper biasing, connect the gate of the FDS6676AS to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended biasing voltage is typically around 10-15V.
  • The maximum current rating for the FDS6676AS is 2A continuous drain current and 4A peak drain current.
  • To protect the FDS6676AS from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the workspace is ESD-protected. Also, use ESD-protected packaging and storage materials.
  • For optimal performance, use a multi-layer PCB with a solid ground plane, and keep the drain and source pins as close as possible to minimize inductance. Also, use a low-ESR capacitor for decoupling.

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FDS6676AS Overview

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FDS6676AS Alternates

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Part Image FDS6676AS Rochester Electronics LLC

14500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8

Part Image FDS6676AS Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6676S Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6676S_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6676AS_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDS6676AS, check out Findchips.com