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FDS6692A - onsemi

Description: Last Shipments - N-Channel PowerTrench SyncFET, 30V, 21A, 3.6mΩ

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FDS6692A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS6692A - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS6692A Details

  • Manufacturer Part Number:

    FDS6692A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    79 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.0115 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.47 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6692A Frequently Asked Questions (FAQs)

  • The FDS6692A can operate from -40°C to 150°C, making it suitable for automotive and industrial applications.
  • To ensure proper biasing, connect the gate pin to a voltage source through a 1 kΩ resistor, and connect the source pin to a voltage source through a 10 kΩ resistor. This will provide a stable voltage reference for the device.
  • To minimize EMI and thermal issues, use a multi-layer PCB with a solid ground plane, and place the FDS6692A near the power source. Use short, wide traces for the drain and source pins, and keep the gate pin trace as short as possible. Also, consider using a thermal pad or heat sink to dissipate heat.
  • Yes, the FDS6692A can be used as a switch in high-frequency applications up to 100 kHz. However, ensure that the gate drive circuitry is designed to provide a fast rise and fall time to minimize switching losses.
  • To protect the FDS6692A from overvoltage and overcurrent conditions, use a voltage regulator or a zener diode to clamp the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FDS6692A Overview

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Part Image FDS6692A Fairchild Semiconductor Corporation

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