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FDS6690A - onsemi

Description: Low gate charge; High power and current handling capability; RDS(ON) = 12.5 mΩ @ VGS = 10 V; 11 A, 30 V; High performance trench technology for extremely low RDS(ON); Fast switching speed; RDS(ON) = 17.0 mΩ @ VGS = 4.5 V

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FDS6690A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC 8
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FDS6690A - onsemi  - 3D model - Small Outline Packages - SOIC 8
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FDS6690A Details

  • Manufacturer Part Number:

    FDS6690A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    96 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    115 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    63 ns

  • Turn-on Time-Max (ton):

    29 ns

FDS6690A Frequently Asked Questions (FAQs)

  • The FDS6690A can operate from -40°C to 150°C, making it suitable for automotive and industrial applications.
  • To ensure proper biasing, connect the gate pin to a voltage source through a resistor, and the source pin to a voltage source or ground through a resistor. Refer to the application note for specific biasing recommendations.
  • The FDS6690A has a maximum current rating of 10A, making it suitable for high-current applications.
  • Yes, the FDS6690A is suitable for high-frequency switching applications up to 1 MHz, making it suitable for DC-DC converters, motor control, and other high-frequency applications.
  • Use a voltage regulator or a zener diode to limit the voltage, and a current sense resistor or a fuse to limit the current. Additionally, consider using a protection IC or a dedicated overvoltage and overcurrent protection circuit.

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FDS6690A Overview

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Part Image FDS6690A-NBNP006 onsemi

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Part Image FDS6690AL86Z Fairchild Semiconductor Corporation

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Part Image FDS6690A-OLDDIE Fairchild Semiconductor Corporation

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Part Image FDS6690A_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDS6690A, check out Findchips.com