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FDS6612A - onsemi

Description: Low gate charge ; Fast switching speed ; RDS(ON) = 22 mΩ @ VGS = 10 V ; High power and current handling capability ; High performance trench technology for extremely low RDS(ON) ; 8.4 A, 30 V ; RDS(ON) = 30 mΩ @ VGS = 4.5 V

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FDS6612A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB 0
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FDS6612A Details

  • Manufacturer Part Number:

    FDS6612A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.4 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    55 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6612A Frequently Asked Questions (FAQs)

  • The FDS6612A can operate from -40°C to 150°C, making it suitable for automotive and industrial applications.
  • To ensure proper biasing, connect the gate pin to a voltage source through a resistor, and the source pin to a voltage source or ground through a resistor. Refer to the application note for specific biasing recommendations.
  • The FDS6612A has a maximum continuous drain current rating of 2.5A, and a maximum pulsed drain current rating of 5A.
  • To protect the FDS6612A from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the PCB has proper ESD protection circuits.
  • Yes, the FDS6612A is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

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FDS6612A Overview

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Part Image FDS6612A_NL Fairchild Semiconductor Corporation

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Part Image FDS6612AL86Z Fairchild Semiconductor Corporation

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Part Image FDS6612AS62Z Fairchild Semiconductor Corporation

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Part Image FDS6612AD84Z Fairchild Semiconductor Corporation

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For a full list of alternate parts for FDS6612A, check out Findchips.com