FDS6682 - onsemi
Description: High power and current handling capability; High performance trench technology for extremelylow RDS(ON); RDS(ON) = 7.5 mΩ @ VGS = 10 V; 14 A, 30 V; Low gate charge (22 nC typical); RDS(ON) = 9.0 mΩ @ VGS = 4.5 V
Description: High power and current handling capability; High performance trench technology for extremelylow RDS(ON); RDS(ON) = 7.5 mΩ @ VGS = 10 V; 14 A, 30 V; Low gate charge (22 nC typical); RDS(ON) = 9.0 mΩ @ VGS = 4.5 V
