FDS6898AZ - onsemi

Description: ESD protection diode (note 3); 9.4 A, 20 V; High power and current handling capability; RDS(ON) = 18 mΩ @ VGS = 2.5 V; Low gate charge (16 nC typical); High performance trench technology for extremely low RDS(ON); RDS(ON) = 14 mΩ @ VGS = 4.5 V