FDS6982AS - onsemi

Description: Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.6A, 30V Max. RDS(on) = 13.5 mΩ at VGS = 10 V Max. RDS(on) = 16.5 mΩ at VGS = 4.5 V Low gate charge (21nC typical); Q1 Optimized for low switching losses 6.3A, 30V Max. RDS(on) = 28.0 mΩ at VGS = 10 V Max. RDS(on) = 35.0 mΩ at VGS = 4.5 V Low gate charge (11nC typical)