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FDS6982AS - onsemi

Description: Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.6A, 30V Max. RDS(on) = 13.5 mΩ at VGS = 10 V Max. RDS(on) = 16.5 mΩ at VGS = 4.5 V Low gate charge (21nC typical); Q1 Optimized for low switching losses 6.3A, 30V Max. RDS(on) = 28.0 mΩ at VGS = 10 V Max. RDS(on) = 35.0 mΩ at VGS = 4.5 V Low gate charge (11nC typical)

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FDS6982AS - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS6982AS - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS6982AS Details

  • Manufacturer Part Number:

    FDS6982AS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.6 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    64 ns

  • Turn-on Time-Max (ton):

    34 ns

FDS6982AS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the device away from heat sources and ensure good airflow.
  • Ensure the input voltage is within the recommended range (4.5V to 5.5V) and the output voltage is set correctly using the FB pin. Also, ensure the input and output capacitors are of suitable values and types.
  • The maximum current rating for the FDS6982AS is 2A. However, it's recommended to derate the current to 1.5A for optimal reliability and thermal performance.
  • Use a voltage supervisor or a voltage monitor IC to detect overvoltage and undervoltage conditions. You can also add a voltage clamp or a TVS diode to protect the device from voltage transients.
  • Use a pi-filter or a common-mode choke to filter out high-frequency noise and EMI. Ensure the filter components are placed close to the device and the PCB layout is optimized for minimal radiation.

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FDS6982AS Overview

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Part Image FDS6982AS Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6982AS_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET