FDS69 Model Download Search Results
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FDS6911
onsemi
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1 | Obsolete - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET 30V, 6A, 28mΩ | Small Outline Packages | FDS6911 |
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FDS6982AS
onsemi
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1 | Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.6A, 30V Max. RDS(on) = 13.5 mΩ at VGS = 10 V Max. RDS(on) = 16.5 mΩ at VGS = 4.5 V Low gate charge (21nC typical); Q1 Optimized for low switching losses 6.3A, 30V Max. RDS(on) = 28.0 mΩ at VGS = 10 V Max. RDS(on) = 35.0 mΩ at VGS = 4.5 V Low gate charge (11nC typical) | Small Outline Packages | FDS6982AS |
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FDS6961A
onsemi
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1 | Last Shipments - Dual Notebook Power Supply N-Channel PowerTrench SyncFET 30V | Small Outline Packages | FDS6961A |
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FDS6910
onsemi
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1 | High performance trench technology for extremely low RDS(ON); Fast switching speed; 7.5A, 30V RDS(ON) = 13 mΩ @ VGS = 10V RDS(ON) = 17 mΩ @ VGS = 4.5V; Low gate charge; High power and current handling capability | Small Outline Packages | FDS6910 |
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FDS6912A
onsemi
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1 | Low gate charge; 6 A, 30 V; RDS(ON) = 35 mΩ @ VGS = 4.5 V ; RDS(ON) = 28 mΩ @ VGS = 10 V; Fast switching speed; High performance trench technology for extremely low RDS(ON); High power and current handling capability | Small Outline Packages | FDS6912A |
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FDS6900AS
onsemi
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1 | Last Shipments - Dual N-Channel Logic Level PowerTrench MOSFET, 30V, 7.5A, 17mΩ | Small Outline Packages | FDS6900AS |
3
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FDS6930A
onsemi
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1 | Dual N-Channel Logic Level PowerTrench® MOSFET 30V, 5.5A, 40mΩ | Small Outline Packages | FDS6930A |
3
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FDS6990AS
onsemi
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1 | High performance trench technology for extremely low RDS(ON) ; Includes SyncFET Schottky body diode ; 7.5A, 30V RDS(ON) = 22 mΩ @ VGS = 10V RDS(ON) = 28 mΩ @ VGS = 4.5V ; High power and current handling capability ; Low gate charge (10nC typical) | Small Outline Packages | FDS6990AS |
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FDS6986AS
onsemi
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1 | Q1 Optimized for low switching losses A, V Max. RDS(on) = 29 mΩ at VGS = 10 V Max. RDS(on) = 38 mΩ at VGS = 4.5 V Low gate charge (10 nC typical); Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode 7.9A, 30V Max. RDS(on) = 20 mΩ at VGS = 10 V Max. RDS(on) = 28 mΩ at VGS = 4.5 V | Small Outline Packages | FDS6986AS |
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FDS6990A
onsemi
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1 | Last Shipments - Dual N-Channel PowerTrench SyncFET, 30V, 7.5A, 22mΩ | Small Outline Packages | FDS6990A |
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FDS6975
onsemi
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1 | Low gate charge (14.5nC typical).; High performance trench technology for extremely low RDS(ON).; High power and current handling capability.; -6 A, -30 V RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. | Small Outline Packages | FDS6975 |
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FDS6982S
onsemi
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1 | Mosfet Array 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC | Small Outline Packages | FDS6982S |
3
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FDS6984AS
onsemi
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1 | Last Shipments - Dual Notebook Power Supply N-Channel PowerTrench SyncFET 30V | Small Outline Packages | FDS6984AS |
3
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FDS6930B
onsemi
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1 | 5.5A, 30V; Fast switching speed; High performance trench technology for extremely low RDS(ON); High power and current handling capability; RDS(ON) = 50 mΩ @ VGS = 4.5V; RDS(ON) = 38 mΩ @ VGS = 10V; Low gate charge | Small Outline Packages | FDS6930B |
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FDS6975.
onsemi
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1 | Mosfet Array 30V 6A 900mW Surface Mount 8-SOIC | Small Outline Packages | FDS6975. |
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FDS6990AD84Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6990AD84Z |
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FDS6986S_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6986S_NL |
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FDS6912L86Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6912L86Z |
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FDS6912A_NBNN006
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), N-Channel, Metal-oxide Semiconductor FET | FDS6912A_NBNN006 |
0
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FDS6984SD84Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6984SD84Z |
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FDS6994S_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6994S_NL |
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FDS6990A-NBBM020
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 7.5A I(D), N-Channel, Metal-oxide Semiconductor FET | FDS6990A-NBBM020 |
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FDS6912A
Rochester Electronics LLC
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1 | 6000mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | FDS6912A |
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FDS6900AS_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8.2A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6900AS_NL |
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FDS6982AS
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6982AS |
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![Part Image](["https://componentsearchengine.com/Images/9/FDS6911.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDS6961A.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDS6900AS.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDS6930A.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDS6990A.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/21991471.1.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDS6984AS.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0/19742928.png",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
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