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FDS6984AS - onsemi

Description: Last Shipments - Dual Notebook Power Supply N-Channel PowerTrench SyncFET 30V

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FDS6984AS - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A--
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FDS6984AS Details

  • Manufacturer Part Number:

    FDS6984AS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6984AS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper bias voltage (VBIAS) to operate correctly. Ensure VIN is within the recommended range (4.5V to 5.5V) and VBIAS is set to 2.5V ± 0.1V.
  • The FDS6984AS can handle a maximum continuous current of 1.5A per channel, with a peak current of 3A for 10ms. Exceeding these limits may cause device damage or degradation.
  • Use a TVS diode or a zener diode to clamp the input voltage to prevent overvoltage. Add ESD protection devices, such as a transient voltage suppressor (TVS) or a diode array, to protect the device from electrostatic discharge.
  • The FDS6984AS is rated for operation from -40°C to 125°C. Operating the device outside this range may affect its performance, reliability, or lifespan.

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FDS6984AS Overview

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Part Image FDS6984AS Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6984AS_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET