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FDS6990A - onsemi

Description: Last Shipments - Dual N-Channel PowerTrench SyncFET, 30V, 7.5A, 22mΩ

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FDS6990A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB_-
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FDS6990A Details

  • Manufacturer Part Number:

    FDS6990A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6990A Frequently Asked Questions (FAQs)

  • The FDS6990A can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate of the FDS6990A to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Consult the datasheet for specific values.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the FDS6990A close to the power source. Avoid using vias under the device, and use a solid ground plane.
  • Yes, the FDS6990A can be used in switching applications, but it's essential to ensure the device is properly biased and the switching frequency is within the recommended range (typically up to 100 kHz). Exceeding this frequency may lead to reduced performance and increased power losses.
  • To protect the FDS6990A from ESD, handle the device by the body or use an anti-static wrist strap, and store the device in an anti-static bag or container. Ensure the PCB has ESD protection components, such as TVS diodes or ESD protection arrays.

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FDS6990A Overview

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Part Image FDS6990A_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET