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FDS6986AS - onsemi

Description: Q1 Optimized for low switching losses A, V Max. RDS(on) = 29 mΩ at VGS = 10 V Max. RDS(on) = 38 mΩ at VGS = 4.5 V Low gate charge (10 nC typical); Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode 7.9A, 30V Max. RDS(on) = 20 mΩ at VGS = 10 V Max. RDS(on) = 28 mΩ at VGS = 4.5 V

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FDS6986AS - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - so81-1
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FDS6986AS Details

  • Manufacturer Part Number:

    FDS6986AS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6986AS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the device away from heat sources and ensure good airflow.
  • Ensure the input voltage is within the recommended range (4.5V to 5.5V) and the output voltage is set correctly using the FB pin. Also, ensure the input and output capacitors are of suitable values and types.
  • The maximum output current capability of the FDS6986AS is 3A, but it can be limited by the thermal performance of the PCB and the input voltage.
  • Use a voltage supervisor or a voltage monitor IC to detect overvoltage and undervoltage conditions and shut down the device if necessary. Also, ensure the input voltage is within the recommended range.
  • A 10uF to 22uF ceramic or electrolytic capacitor with a voltage rating of 6.3V or higher is recommended. The capacitor should be placed close to the VIN pin.

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FDS6986AS Overview

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Part Image FDS6986S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET