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FDS6975 - onsemi

Description: Low gate charge (14.5nC typical).; High performance trench technology for extremely low RDS(ON).; High power and current handling capability.; -6 A, -30 V RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V.

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FDS6975 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC 8
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FDS6975 - onsemi  - 3D model - Small Outline Packages - SOIC 8
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FDS6975 Details

  • Manufacturer Part Number:

    FDS6975

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6975 Frequently Asked Questions (FAQs)

  • The maximum current rating of the FDS6975 is 3A, but it's recommended to operate it at 2A or less for optimal performance and reliability.
  • To ensure proper biasing, connect the gate of the FDS6975 to a voltage source through a resistor (e.g., 1 kΩ) and a capacitor (e.g., 100 nF) in parallel. This helps to stabilize the gate voltage and reduce noise.
  • The recommended operating temperature range for the FDS6975 is -40°C to 150°C. However, it's essential to ensure proper thermal management to prevent overheating, especially in high-power applications.
  • Yes, the FDS6975 can be used as a switch in high-frequency applications, but it's crucial to consider the device's parasitic capacitance and inductance, as well as the PCB layout, to minimize signal degradation and ensure optimal performance.
  • To protect the FDS6975 from ESD, use proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider adding ESD protection circuits, like TVS diodes or ESD arrays, in the design.

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FDS6975 Overview

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