FDS8880 - onsemi
Description: Low gate charge ; RDS(ON) = 10 mΩ @ VGS = 10V @ ID = 11.6A ; High performance trench technology for extremely lowrDS(ON) ; High power and current handling capability ; RDS(ON) = 12mΩ @ VGS = 4.5V @ ID = 10.7A
Description: Low gate charge ; RDS(ON) = 10 mΩ @ VGS = 10V @ ID = 11.6A ; High performance trench technology for extremely lowrDS(ON) ; High power and current handling capability ; RDS(ON) = 12mΩ @ VGS = 4.5V @ ID = 10.7A
