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FDS8880 - onsemi

Description: Low gate charge ; RDS(ON) = 10 mΩ @ VGS = 10V @ ID = 11.6A ; High performance trench technology for extremely lowrDS(ON) ; High power and current handling capability ; RDS(ON) = 12mΩ @ VGS = 4.5V @ ID = 10.7A

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FDS8880 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO-8-1
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FDS8880 - onsemi  - 3D model - Small Outline Packages - SO-8-1
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FDS8880 Details

  • Manufacturer Part Number:

    FDS8880

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    82 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11.6 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS8880 Frequently Asked Questions (FAQs)

  • The maximum current rating of the FDS8880 is 3.5A per channel, but it's recommended to derate the current to 2.5A per channel for reliable operation.
  • To ensure proper thermal management, it's recommended to attach a heat sink to the FDS8880, and ensure good airflow around the device. The thermal pad on the bottom of the package should be connected to a solid ground plane on the PCB to help dissipate heat.
  • The recommended PCB layout for the FDS8880 involves keeping the high-current paths short and wide, using multiple vias to connect the thermal pad to a solid ground plane, and keeping the switching nodes away from sensitive analog circuits.
  • To optimize the FDS8880 for low power consumption, it's recommended to use a low-dropout linear regulator for the VCC supply, minimize the switching frequency, and use a high-efficiency inductor.
  • Key considerations for EMI filtering with the FDS8880 include using a common-mode choke, adding a capacitor in series with the input voltage, and using a shielded inductor to reduce radiated emissions.

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FDS8880 Overview

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Part Image FDS8880 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11.6A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS8880_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11.6A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET