FDS89141 - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A; High Performance Trench Technology for Extremely Low rDS(on); RoHS Compliant; 100% UIL Tested; Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A; High Power and Current Handling Capability in a Widely Used Surface Mount Package