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FDS89141 - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A; High Performance Trench Technology for Extremely Low rDS(on); RoHS Compliant; 100% UIL Tested; Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A; High Power and Current Handling Capability in a Widely Used Surface Mount Package

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FDS89141 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_2020-1
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FDS89141 - onsemi  - 3D model - Small Outline Packages - SO-8_2020-1
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FDS89141 Details

  • Manufacturer Part Number:

    FDS89141

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    37 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.062 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS89141 Frequently Asked Questions (FAQs)

  • The FDS89141 can operate from -40°C to 150°C, making it suitable for automotive and industrial applications.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the EN pin to a logic high (VCC) to enable the device. Also, ensure the input voltage (VIN) is within the recommended range of 4.5V to 18V.
  • To minimize EMI and thermal issues, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and separate, and use thermal vias to dissipate heat. Also, place the device near the power source and use a heat sink if necessary.
  • Use a voltage regulator or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. For overcurrent protection, add a fuse or a current-limiting resistor in series with the input voltage.
  • Use a ceramic or film capacitor with a value of 1uF to 10uF, depending on the input voltage and frequency. A higher capacitance value can help reduce input ripple and improve stability.

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