FGAF40S65AQ - onsemi

Description: Maximum junction temperature : TJ = 175°C; Positive temperaure co-efficient for easy parallel operating; High current capability; Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A; High input impedance; Fast switching; Tightened parameter distribution; RoHS compliant; 100% of the Parts tested for ILM; IGBT with monolithic reverse conducting diode