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FGAF40S65AQ - onsemi

Description: Maximum junction temperature : TJ = 175°C; Positive temperaure co-efficient for easy parallel operating; High current capability; Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A; High input impedance; Fast switching; Tightened parameter distribution; RoHS compliant; 100% of the Parts tested for ILM; IGBT with monolithic reverse conducting diode

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PCB Footprints
FGAF40S65AQ - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PF-3L
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3D Models
FGAF40S65AQ - onsemi  - 3D model - Transistor Outline, Vertical - TO-3PF-3L
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FGAF40S65AQ Details

  • Manufacturer Part Number:

    FGAF40S65AQ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3PF-3L

  • Manufacturer Package Code:

    340AH

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    94 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    GENERAL PURPOSE SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    90.8 ns

  • Turn-on Time-Nom (ton):

    30.3 ns

  • VCEsat-Max:

    2.1 V

FGAF40S65AQ Frequently Asked Questions (FAQs)

  • The maximum junction temperature that FGAF40S65AQ can withstand is 175°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The recommended gate drive voltage for FGAF40S65AQ is between 10V to 15V, with a maximum of 20V.
  • Yes, FGAF40S65AQ can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized.
  • To protect FGAF40S65AQ from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector, and to implement overcurrent protection using a current sense resistor and a comparator.

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FGAF40S65AQ Overview

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