FNB35060T - onsemi

Description: Very Low Thermal Resistance using AlN DBC Substrate; Single-Grounded Power Supply; Isolation Rating: 2500 Vrms / 1 min.; 600 V - 50 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection; Low-Loss, Short-Circuit Rated IGBTs; Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing; LVIC Temperature-Sensing Built-In for Temperature Monitoring; Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout