Description:Very Low Thermal Resistance using AlN DBC Substrate; Single-Grounded Power Supply; Isolation Rating: 2500 Vrms / 1 min.; 600 V - 50 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection; Low-Loss, Short-Circuit Rated IGBTs; Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing; LVIC Temperature-Sensing Built-In for Temperature Monitoring; Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout
A good PCB layout for the FNB35060T involves keeping the high-frequency switching nodes (e.g., SW node) away from sensitive analog nodes, using a solid ground plane, and minimizing loop areas in the power stage. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
To optimize the compensation network, start with the recommended values in the datasheet and then adjust RCOMP and CCOMP based on the desired transient response and stability margin. A good starting point is to set RCOMP to 1 kΩ and CCOMP to 10 nF, and then adjust from there.
The maximum allowed voltage on the VIN pin of the FNB35060T is 32 V, but it's recommended to keep it below 28 V to ensure reliable operation and minimize the risk of damage.
To ensure the FNB35060T operates within its SOA, monitor the junction temperature (TJ) and ensure it stays below 150°C. Also, keep the input voltage (VIN) and output current (IOUT) within the recommended ranges, and avoid operating the device in a way that causes excessive power dissipation.
A low-ESR ceramic capacitor (e.g., X5R or X7R) with a value of 10 μF to 22 μF is recommended for the input capacitor (CIN). This helps to filter the input voltage and reduce ripple.
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FNB35060T Overview
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